PART |
Description |
Maker |
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode From old datasheet system
|
NXP Semiconductors Philipss
|
BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS AG Siemens Semiconductor Group
|
HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
|
HVD372B HVD372B06 HVD372B-06 |
Variable Capacitance Diode for VCO 16 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Renesas Electronics Corporation
|
ZC930 ZC930TA ZC931TA ZC932TA ZC933A ZC933ATA ZC93 |
12 Volt hyperabrupt varactor diode SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 4.9 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE CAP 0.022UF 600V/630V 10% X7R SMD-1812 TR-7 FLEXITERM VHF BAND, 9.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC ZETEX PLC
|
AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
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1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
GC3202-00 GC3205-50 |
UHF BAND, 21.5 pF, 180 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 2.25 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
|
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